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                          BAS85 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 6 — 10 September 2010 2 of 10 NXP Semiconductors BAS85 Schottky barrier diode 2. Pinning information [1] The marking band indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode ka12 sym001 Table 3. Ordering information Type number Package Name Description Version BAS85 - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes Type number Marking code BAS85 marking band Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current - 200 mA IF(AV) average forward current [1] -200mA IFRM repetitive peak forward current tp ≤ 1s; δ≤0.5 - 300 mA IFSM non-repetitive peak forward current tp =10ms - 5 A Tj junction temperature - 125 °C Tamb ambient temperature ?65 +125 °C Tstg storage temperature ?65 +150 °C |